发明名称 METHOD FOR MANUFACTURING SPUTTERING TARGET
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a sputtering target for forming a film containing Co, Ta and a rare-earth metal, which can enhance the density of the target to such a level that the target is hardly cracked and can be machined.SOLUTION: This manufacturing method includes the steps of: preparing a mixture powder of an R-Co alloy powder which is an alloy powder of Co and R that is a rare-earth metal and a Ta powder so that the composition of the target comprises 5-10 atom% R, 5-10 atom% Ta and the balance Co with unavoidable impurities by a ratio; and hot-pressing the mixture powder in a vacuum or an inert-gas atmosphere.
申请公布号 JP2011208168(A) 申请公布日期 2011.10.20
申请号 JP20100073958 申请日期 2010.03.28
申请人 MITSUBISHI MATERIALS CORP 发明人 ISHIYAMA KOICHI;NONAKA SOHEI
分类号 C23C14/34;B22F1/00;B22F3/14;B22F9/08;C22C1/04;C22C19/07;G11B5/851 主分类号 C23C14/34
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