发明名称 |
METHOD FOR MANUFACTURING SPUTTERING TARGET |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a sputtering target for forming a film containing Co, Ta and a rare-earth metal, which can enhance the density of the target to such a level that the target is hardly cracked and can be machined.SOLUTION: This manufacturing method includes the steps of: preparing a mixture powder of an R-Co alloy powder which is an alloy powder of Co and R that is a rare-earth metal and a Ta powder so that the composition of the target comprises 5-10 atom% R, 5-10 atom% Ta and the balance Co with unavoidable impurities by a ratio; and hot-pressing the mixture powder in a vacuum or an inert-gas atmosphere. |
申请公布号 |
JP2011208168(A) |
申请公布日期 |
2011.10.20 |
申请号 |
JP20100073958 |
申请日期 |
2010.03.28 |
申请人 |
MITSUBISHI MATERIALS CORP |
发明人 |
ISHIYAMA KOICHI;NONAKA SOHEI |
分类号 |
C23C14/34;B22F1/00;B22F3/14;B22F9/08;C22C1/04;C22C19/07;G11B5/851 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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