发明名称 |
ALGORITHMIC PROCESSING TO CREATE FEATURES |
摘要 |
Sub-lithographi lamella and pillar structures defined by larger lines or lamellae are described. A static random access memory (SRAM) cell structure is created in a three-dimensional format as a vertical stack of wired transistors. These transistors are fabricated from crystalline silicon, and supplemental wiring structure features are fabricated to comprise a circuit along the walls of a vertical pillar. The three-dimensional cell integrated circuit can be created by a single mask step. Various structural features and methods of fabrication are described in detail. Peripheral interface, a two pillar version and other supplemental techniques and structural variations are also described.
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申请公布号 |
US2011256308(A1) |
申请公布日期 |
2011.10.20 |
申请号 |
US201113048867 |
申请日期 |
2011.03.15 |
申请人 |
BUERGER JR WALTER RICHARD |
发明人 |
BUERGER, JR. WALTER RICHARD |
分类号 |
H05K3/12 |
主分类号 |
H05K3/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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