| 摘要 |
A field effect transistor includes a channel layer of group-III nitride-based compound semiconductor; an interface layer formed on the channel layer and of AlXInYGa1-X-YN, where 0≦̸X≦̸1, 0≦̸Y≦̸1, and X+Y≦̸1, which is different from material of the channel layer, an electron supplying layer of group-III nitride-based compound semiconductor formed on the interface layer, the electron supplying layer having a recess that reaches the interface layer; a source electrode and a drain electrode formed on the electron supplying layer on respective sides of the recess; an insulating film formed on an inner surface of the recess; and a gate electrode formed on the insulating film.
|
