发明名称 SWITCHING DEVICE, DRIVE AND MANUFACTURING METHODS FOR THE SAME, INTEGRATED CIRCUIT DEVICE AND MEMORY DEVICE
摘要 Provided is a switching device including ion conducting part 4 having an ion conductor, first electrode 1 formed at a first gap away from ion conducting part 4, second electrode 2 formed to be in contact with ion conducting part 4 and third electrode 3 formed at a second gap away from ion conducting part 4. Second electrode 2 supplies metal ions to the ion conductor, or receives the metal ions from the ion conductor to precipitate metal corresponding to the metal ions.
申请公布号 US2011253967(A1) 申请公布日期 2011.10.20
申请号 US201113173792 申请日期 2011.06.30
申请人 NEC CORPORATION 发明人 KAWAURA HISAO;SUNAMURA HIROSHI
分类号 H01L45/00 主分类号 H01L45/00
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