发明名称 |
RAISED SOURCE/DRAIN STRUCTURE FOR ENHANCED STRAIN COUPLING FROM STRESS LINER |
摘要 |
A transistor is provided that includes a buried oxide layer above a substrate. A silicon layer is above the buried oxide layer. A gate stack is on the silicon layer, the gate stack including a high-k oxide layer on the silicon layer and a metal gate on the high-k oxide layer. A nitride liner is adjacent to the gate stack. An oxide liner is adjacent to the nitride liner. A set of faceted raised source/drain regions having a part including a portion of the silicon layer. The set of faceted raised source/drain regions also include a first faceted side portion and a second faceted side portion.
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申请公布号 |
US2011254090(A1) |
申请公布日期 |
2011.10.20 |
申请号 |
US20100760250 |
申请日期 |
2010.04.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;DORIS BRUCE;KHAKIFIROOZ ALI;KULKARNI PRANITA;SHAHIDI GHAVAM |
分类号 |
H01L29/06;H01L21/762 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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