发明名称 |
COMPOSITIONS COMPRISING BASE-REACTIVE COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY |
摘要 |
New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have base-reactive groups. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
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申请公布号 |
US2011255061(A1) |
申请公布日期 |
2011.10.20 |
申请号 |
US20100966928 |
申请日期 |
2010.12.13 |
申请人 |
ROHM AND HAAS ELECTRONIC MATERIALS, L.L.C. |
发明人 |
WANG DEYAN;LIU JINRONG;LIU CONG;KANG DORIS;ZAMPINI ANTHONY;XU CHENG-BAI |
分类号 |
G03B27/00;G03F7/004;G03F7/20 |
主分类号 |
G03B27/00 |
代理机构 |
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