发明名称 |
POLYSILICON LAYER, METHOD OF PREPARING THE POLYSILICON LAYER, THIN FILM TRANSISTOR USING THE POLYSILICON LAYER, AND ORGANIC LIGHT EMITTING DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR |
摘要 |
A method of crystallizing a silicon layer. An amorphous silicon layer is formed on a buffer layer on a substrate. A catalyst metal layer is formed on the amorphous silicon layer to have a density of from about 1011 to about 1015 atom/cm2. A crystalline seed having a pyramid shape is formed on an interface between the amorphous silicon layer and the buffer layer as a catalyst metal of the catalyst metal layer diffuses into the amorphous silicon layer. The amorphous silicon layer is thermal-treated so that a polysilicon layer is formed as a silicon crystal grows by the crystallization seed.
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申请公布号 |
US2011253987(A1) |
申请公布日期 |
2011.10.20 |
申请号 |
US201113012619 |
申请日期 |
2011.01.24 |
申请人 |
SAMSUNG MOBILE DISPLAY CO., LTD. |
发明人 |
CHUNG YUN-MO;LEE KI-YONG;SEO JIN-WOOK;LEE KIL-WON;CHOI BO-KYUNG |
分类号 |
H01L51/52;H01L21/205;H01L29/786 |
主分类号 |
H01L51/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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