发明名称 POLYSILICON LAYER, METHOD OF PREPARING THE POLYSILICON LAYER, THIN FILM TRANSISTOR USING THE POLYSILICON LAYER, AND ORGANIC LIGHT EMITTING DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR
摘要 A method of crystallizing a silicon layer. An amorphous silicon layer is formed on a buffer layer on a substrate. A catalyst metal layer is formed on the amorphous silicon layer to have a density of from about 1011 to about 1015 atom/cm2. A crystalline seed having a pyramid shape is formed on an interface between the amorphous silicon layer and the buffer layer as a catalyst metal of the catalyst metal layer diffuses into the amorphous silicon layer. The amorphous silicon layer is thermal-treated so that a polysilicon layer is formed as a silicon crystal grows by the crystallization seed.
申请公布号 US2011253987(A1) 申请公布日期 2011.10.20
申请号 US201113012619 申请日期 2011.01.24
申请人 SAMSUNG MOBILE DISPLAY CO., LTD. 发明人 CHUNG YUN-MO;LEE KI-YONG;SEO JIN-WOOK;LEE KIL-WON;CHOI BO-KYUNG
分类号 H01L51/52;H01L21/205;H01L29/786 主分类号 H01L51/52
代理机构 代理人
主权项
地址