| 摘要 |
PROBLEM TO BE SOLVED: To provide a power semiconductor device capable of reducing unevenness in characteristics by reducing unevenness in thickness of an insulating film after a CMP process.SOLUTION: The power semiconductor device has a termination structure in which a field plate is provided on an insulating film 3 filled in a recessed region formed in a semiconductor substrate 1 and includes a plurality of unit cells 10 connected in parallel. The power semiconductor device includes a gate wiring region 12 in which gate wiring electrically connected to each gate electrode of the plurality of unit cells 10 is disposed, and a gate pad region 13 electrically connected to the gate wiring region 12. The gate wiring region 12 is disposed on the insulating film 3 filled in the recessed region formed in the semiconductor substrate 1. |
