| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device and a read/write control method thereof of which the speed increase of data read/write operation and the reduction of power consumption are enhanced by making a potential difference between a source and a drain to be small to attain a gate length of a memory cell to be shorten and by solving such a problem that charge and discharge of a comparatively larger electric charge occur when the verification is performed after writing (program) bit data to the memory cell.SOLUTION: At the program operating time t7, a voltage of 4V is applied to a cell well of a selection memory cell, 0V is applied to the drain, 10V is applied to the gate, and VCC is applied to the source respectively, and at the following verification time t13, a selection word line WL is set to -5V while keeping the voltage of the cell well to be 4V as it is. Also, at this time, the WL is being set to a voltage (-5V) having an absolute value higher than the voltage at the usual readout time. |
