发明名称 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND WRITING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To narrow threshold distribution by suppressing write fluctuation in a nonvolatile semiconductor storage device.SOLUTION: When a threshold of a memory cell transistor to be written is less than a first threshold, first writing for applying a first bit line voltage to a bit line is performed. When the threshold of a memory cell transistor to be written is not less than the first threshold and less than a second threshold, second writing for applying a second bit line voltage larger than the first bit line voltage to the bit line is performed. When the threshold of a memory cell transistor to be written is not less than the second threshold and less than a third threshold, third writing for applying a third bit line voltage larger than the second bit line voltage to the bit line is performed.
申请公布号 JP2011210337(A) 申请公布日期 2011.10.20
申请号 JP20100079830 申请日期 2010.03.30
申请人 TOSHIBA CORP 发明人 HOGYOKU MITSURU;FUKUDA KOICHI;UENO HIROTAKA;KONDO SHIGEO;YAMADA KUNIHIRO;SHIGYO NAOYUKI
分类号 G11C16/02;G11C16/04 主分类号 G11C16/02
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