| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same capable of controlling a working shape with more high precision by reducing charge-up induced by positive ions and controlling ion energy distribution.SOLUTION: A plasma treatment apparatus 10 as a semiconductor manufacturing apparatus comprises a chamber 11, a wafer-arranging electrode 12 which is formed in the chamber 11 and on which a semiconductor wafer W is disposed, a counter electrode 13 arranged in the chamber 11 so as to face the wafer-arranging electrode 12, a high-frequency power supply 14 for applying a high-frequency voltage to the wafer-arranging electrode 12, a first DC pulse power supply 17A for applying a negative first DC pulse voltage Vto the wafer-arranging electrode 12 to be superimposed on a high-frequency voltage, and a second DC pulse power supply 17B for applying a negative second DC pulse voltage Vto the counter electrode 13 in the off period of the first DC pulse voltage V. |
