发明名称 |
METHOD FOR DEPOSITING SILICON NITRIDE FILM, COMPUTER-READABLE STORAGE MEDIUM, AND PLASMA CVD DEVICE |
摘要 |
Provided is a method for depositing a silicon nitride film in a plasma CVD device which introduces microwaves into a process chamber by a planar antenna having a plurality of apertures, and the method including setting the pressure in the process chamber within a range from 10 Pa to 133.3 Pa and performing plasma CVD by using film formation gas including a silicon containing compound gas and a nitrogen gas while applying an RF bias to the wafer by supplying high-frequency power with an output density within a range from 0.009 W/cm2 to 0.64 W/cm2 per unit area of a wafer from a high frequency power supply to an electrode in a holding stage on which the wafer is arranged.
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申请公布号 |
US2011254078(A1) |
申请公布日期 |
2011.10.20 |
申请号 |
US201113164366 |
申请日期 |
2011.06.20 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
HONDA MINORU;KOHNO MASAYUKI |
分类号 |
H01L29/792;B05C11/00;C23C16/511;H01L21/318 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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