发明名称 METHOD OF CUTTING SILICON INGOT INTO PLATES
摘要 FIELD: process engineering. ^ SUBSTANCE: invention relates to processing poly- and monocrystalline semiconductor ingots for cutting them into plates to be used in production of solar batteries, semiconductor devices and printed circuit boards. In cutting semiconductor ingot by lines of wire wetted by abrasive suspension, wire cutting is oriented in cutting zone so that wire is fed into cutting zone by its undeformed surface to used reversing mode. This allows reuse of one wire reel for two cutting processes. Note here that wire breakage probability of reduced as well as cutting duration by more than 3 hours. ^ EFFECT: reduced wire consumption and higher efficiency. ^ 1 ex, 2 dwg
申请公布号 RU2431564(C1) 申请公布日期 2011.10.20
申请号 RU20100106288 申请日期 2010.02.25
申请人 ZAKRYTOE AKTSIONERNOE OBSHCHESTVO "TELEKOM-STV" 发明人 BELOUSOV VIKTOR SERGEEVICH;KHARLAMOV VITALIJ JUR'EVICH;SHAGAEVA IRINA OLEGOVNA
分类号 B28D5/04 主分类号 B28D5/04
代理机构 代理人
主权项
地址
您可能感兴趣的专利