发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device having excellent reliability that includes a high-side switching element having a first switching element connected between an input voltage line and an inductive load, a low-side switching element having a second switching element and a third switching element connected in parallel between the inductive load and a reference voltage line, and a control circuit that turns ON/OFF the third switching element.SOLUTION: According to an embodiment, a semiconductor device includes a low-side switching element having a second switching element and a third switching element connected in parallel between an inductive load and a reference voltage line, and a control circuit that turns ON/OFF the third switching element. When a surge is applied to a terminal connected to the inductive load of the low-side switching element, a surge current is discharged to the reference voltage line via the third switching element regardless of a signal supplied by the control circuit. In a state in which a voltage within a rated voltage smaller than a surge is applied to the terminal, the third switching element is turned ON/OFF in adherence to the signal supplied by the control circuit.
申请公布号 JP2011211901(A) 申请公布日期 2011.10.20
申请号 JP20110119160 申请日期 2011.05.27
申请人 TOSHIBA CORP 发明人 NAKAMURA KAZUTOSHI;YASUHARA NORIO
分类号 H02M3/155;H01L21/822;H01L21/8234;H01L27/04;H01L27/06;H01L27/088 主分类号 H02M3/155
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