发明名称 |
THIN FILM TRANSITOR, FABRICATION METHOD OF THE SAME AND DISPLAY DEVICE HAVING THE SAME |
摘要 |
<p>A thin film transistor, a method of manufacturing the same, and a display device including the same, the thin film transistor including a substrate; a polysilicon semiconductor layer on the substrate; and a metal pattern between the semiconductor layer and the substrate, the metal pattern being insulated from the semiconductor layer, wherein the polysilicon of the semiconductor layer includes a grain boundary parallel to a crystallization growing direction, and a surface roughness of the polysilicon semiconductor layer defined by a distance between a lowest peak and a highest peak in a surface thereof is less than about 15 nm.</p> |
申请公布号 |
KR20110114089(A) |
申请公布日期 |
2011.10.19 |
申请号 |
KR20100033524 |
申请日期 |
2010.04.12 |
申请人 |
SAMSUNG MOBILE DISPLAY CO., LTD. |
发明人 |
PARK, JONG HYUN;YOU, CHUN GI;PARK, SUN;KANG, JIN HEE;LEE, YUL KYU |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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