发明名称 THIN FILM TRANSITOR, FABRICATION METHOD OF THE SAME AND DISPLAY DEVICE HAVING THE SAME
摘要 <p>A thin film transistor, a method of manufacturing the same, and a display device including the same, the thin film transistor including a substrate; a polysilicon semiconductor layer on the substrate; and a metal pattern between the semiconductor layer and the substrate, the metal pattern being insulated from the semiconductor layer, wherein the polysilicon of the semiconductor layer includes a grain boundary parallel to a crystallization growing direction, and a surface roughness of the polysilicon semiconductor layer defined by a distance between a lowest peak and a highest peak in a surface thereof is less than about 15 nm.</p>
申请公布号 KR20110114089(A) 申请公布日期 2011.10.19
申请号 KR20100033524 申请日期 2010.04.12
申请人 SAMSUNG MOBILE DISPLAY CO., LTD. 发明人 PARK, JONG HYUN;YOU, CHUN GI;PARK, SUN;KANG, JIN HEE;LEE, YUL KYU
分类号 H01L29/786 主分类号 H01L29/786
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