发明名称 |
NON-VOLATILE MEMORY CIRCUIT INCLUDING VOLTAGE DIVIDER WITH PHASE CHANGE MEMORY DEVICES |
摘要 |
<p>A memory circuit including a voltage divider with a first phase change memory (PCM) device and a second PCM device coupled to the first PCM device is described. In one embodiment, the first PCM device is in a set resistance state and the second PCM device is in a reset resistance state. Also, in one embodiment, the voltage divider further includes a first switch coupled to the first PCM device and a second switch coupled to the first switch and the second PCM device. In one embodiment, the memory circuit further includes a half latch coupled to the voltage divider and a cascade transistor coupled to the half latch and the voltage divider.</p> |
申请公布号 |
EP2377128(A1) |
申请公布日期 |
2011.10.19 |
申请号 |
EP20100700086 |
申请日期 |
2010.01.07 |
申请人 |
ALTERA CORPORATION |
发明人 |
MCELHENY, PETER J.;SMOLEN, RICHARD G.;COSTELLO, JOHN C. |
分类号 |
G11C13/02;G11C14/00;G11C16/02 |
主分类号 |
G11C13/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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