Semiconductor element

摘要

In a Schottky diode 11, a gallium nitride support base 13 includes a first surface 13a and a second surface 13b opposite from the first surface and has a carrier concentration exceeding 1 x 1018 cm-3. A gallium nitride epitaxial layer 15 is disposed on the first surface 13a. An Ohmic electrode 17 is disposed on the second surface 13b. The Schottky electrode 19 is disposed on the gallium nitride epitaxial layer 15. A thickness D1 of the gallium nitride epitaxial layer 15 is at least 5 microns and no more than 1000 microns. Also, the carrier density of the gallium nitride epitaxial layer 15 is at least 1 x 1014 cm-3 and no more than 1 x 1017 cm-3.