发明名称 FIELD EFFECT TRANSISTOR, METHOD FOR MANUFACTURING SAME, AND BIOSENSOR
摘要 Disclosed is a carbon nanotube field effect transistor which stably exhibits excellent electrical conduction properties. Also disclosed are a method for manufacturing the carbon nanotube field effect transistor, and a biosensor comprising the carbon nanotube field effect transistor. First of all, an silicon oxide film is formed on a contact region of a silicon substrate by an LOCOS method. Next, an insulating film, which is thinner than the silicon oxide film on the contact region, is formed on a channel region of the silicon substrate. Then, after arranging a carbon nanotube, which forms a channel, on the silicon substrate, the carbon nanotube is covered with a protective film. Finally, a source electrode and a drain electrode are formed, and the source electrode and the drain electrode are electrically connected to the carbon nanotube, respectively. A field effect transistor manufactured by these processes stably exhibits excellent electrical conduction properties since the carbon nanotube, which serves as the channel, is not contaminated.
申请公布号 EP2378559(A1) 申请公布日期 2011.10.19
申请号 EP20090837462 申请日期 2009.12.25
申请人 MITSUMI ELECTRIC CO., LTD.;ARKRAY, INC. 发明人 SUBAGYO, AGUS;NAKAMURA, MOTONORI;YAMABAYASHI, TOMOAKI;TAKAHASHI, OSAMU;KIKUCHI, HIROAKI;KONDO, KATSUNORI
分类号 H01L29/06;H01L29/786;G01N27/414;H01L21/28;H01L21/336;H01L29/41 主分类号 H01L29/06
代理机构 代理人
主权项
地址