发明名称 |
FIELD EFFECT TRANSISTOR, METHOD FOR MANUFACTURING SAME, AND BIOSENSOR |
摘要 |
Disclosed is a carbon nanotube field effect transistor which stably exhibits excellent electrical conduction properties. Also disclosed are a method for manufacturing the carbon nanotube field effect transistor, and a biosensor comprising the carbon nanotube field effect transistor. First of all, an silicon oxide film is formed on a contact region of a silicon substrate by an LOCOS method. Next, an insulating film, which is thinner than the silicon oxide film on the contact region, is formed on a channel region of the silicon substrate. Then, after arranging a carbon nanotube, which forms a channel, on the silicon substrate, the carbon nanotube is covered with a protective film. Finally, a source electrode and a drain electrode are formed, and the source electrode and the drain electrode are electrically connected to the carbon nanotube, respectively. A field effect transistor manufactured by these processes stably exhibits excellent electrical conduction properties since the carbon nanotube, which serves as the channel, is not contaminated.
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申请公布号 |
EP2378559(A1) |
申请公布日期 |
2011.10.19 |
申请号 |
EP20090837462 |
申请日期 |
2009.12.25 |
申请人 |
MITSUMI ELECTRIC CO., LTD.;ARKRAY, INC. |
发明人 |
SUBAGYO, AGUS;NAKAMURA, MOTONORI;YAMABAYASHI, TOMOAKI;TAKAHASHI, OSAMU;KIKUCHI, HIROAKI;KONDO, KATSUNORI |
分类号 |
H01L29/06;H01L29/786;G01N27/414;H01L21/28;H01L21/336;H01L29/41 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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