发明名称 In-line voltage contrast detection of PFET silicide encroachment
摘要 A semiconductor test structure includes a PFET transistor, having a source region, a drain region, a gate disposed between the source region and the drain region, a body disposed under the gate, and a body contact. The source region and drain region float, and the body contact is electrically connected to the body of the PFET transistor and to the ground. This grounds the body of the PFET transistor, and the body contact of the test structure is electrically connected to a capacitor that is electrically connected to ground.
申请公布号 US8039837(B2) 申请公布日期 2011.10.18
申请号 US20090471723 申请日期 2009.05.26
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 PATTERSON OLIVER D.;AHSAN ISHTIAQ
分类号 H01L23/58 主分类号 H01L23/58
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