发明名称 Method of forming fine patterns using a block copolymer
摘要 A method of patterning a substrate includes processing first regions of the substrate to form a first pattern, the first regions defining a second region between adjacent first regions, arranging a block copolymer on the first and second regions, the block copolymer including a first component and a second component, the first component of the block copolymer being aligned on the first regions, and selectively removing one of the first component and the second component of the block copolymer to form a second pattern having a pitch that is less than a pitch of a first region and an adjacent second region.
申请公布号 US8039196(B2) 申请公布日期 2011.10.18
申请号 US20080076491 申请日期 2008.03.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM KYOUNG TAEK;KIM HYUN WOO;KIM SANG OUK;YI SHI YONG;CHOI SEONG WOON
分类号 G03F7/00;G03F7/004;G03F7/20;G03F7/40 主分类号 G03F7/00
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