发明名称 |
IN SITU FORMED DRAIN AND SOURCE REGIONS INCLUDING A STRAIN INDUCING ALLOY AND A GRADED DOPANT PROFILE |
摘要 |
<p>The dopant profile of a transistor may be obtained on the basis of an in situ doped strain-inducing semiconductor alloy wherein a graded dopant concentration may be established along the height direction. Consequently, the semiconductor alloy may be positioned in close proximity to the channel region, thereby enhancing the overall strain-inducing efficiency, while not unduly compromising the finally obtained dopant profile. Furthermore, additional implant species may be incorporated prior to selectively growing the semiconductor alloy, thereby avoiding implantation-induced relaxation of the internal strain.</p> |
申请公布号 |
KR20110113761(A) |
申请公布日期 |
2011.10.18 |
申请号 |
KR20117020214 |
申请日期 |
2010.01.27 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
HOENTSCHEL JAN;GRIEBENOW UWE;PAPAGEORGIOU VASSILIOS |
分类号 |
H01L21/336;H01L21/225;H01L21/265;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|