| 摘要 |
The present application relates to a semiconductor laser, in particular such a laser which operates with substantially single longitudinal mode emission. The laser comprising a laser cavity, the laser further comprising a slot having an interface, characterized in that the slot is substantially filled with a reflective material having a large imaginary index relative to the laser cavity material. The interfaces of the slot may be inclined or may have a step for introducing a quarter wave phase shift.
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