发明名称 |
Non-volatile memory device, computing system and wordline driving method |
摘要 |
A nonvolatile memory device including a memory cell; a word line coupled to the memory cell; a drive line; a switch coupled between the word line and the drive line, and configured to electrically connect the word line and the drive line; and a voltage generator coupled to the drive line and configured to charge the drive line to a precharge voltage. The precharge voltage is higher than a bias voltage applied to the word line during a corresponding operation on the memory cell.
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申请公布号 |
US8040736(B2) |
申请公布日期 |
2011.10.18 |
申请号 |
US20090433685 |
申请日期 |
2009.04.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWAK JOON YOUNG |
分类号 |
G11C16/06 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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