| 摘要 |
In order to provide a thin-film resistor and a manufacturing method thereof capable of restraining reduction of a Q-value of varactor by reducing a parasitic capacitance between the resistor and the substrate, the thin-film resistor includes a semiconductor substrate 10 including an integrated circuit 12 having a plurality of electrode pads 14 placed in a distance from each other in the most upper part of a plurality of stacked interconnections, and the integrated circuit 12 having a passivation film 16 formed between the plurality of electrode pads 14; a secondary interconnections 18 electrically connected to the electrode pads 14; an insulating film 20 formed in a place in between the secondary interconnections 18 on the passivation film 16; and a resistor 26 formed 18 in a predetermined place in between the secondary interconnections 18 on the insulating film 20.
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