发明名称 |
Structure for pixel sensor cell that collects electrons and holes |
摘要 |
The present invention relates to a design structure for a pixel sensor cell. The pixel sensor cell approximately doubles the available signal for a given quanta of light. A design structure for a pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input.
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申请公布号 |
US8039875(B2) |
申请公布日期 |
2011.10.18 |
申请号 |
US20070850776 |
申请日期 |
2007.09.06 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ADKISSON JAMES W.;BRYANT ANDRES;ELLIS-MONAGHAN JOHN J.;JAFFE MARK D;JOHNSON JEFFREY B.;LOISEAU ALAIN |
分类号 |
H01L27/148;H01L31/062 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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