| 摘要 |
One embodiment of the invention relates to a method of manufacturing a light emitting diode. The method includes forming an insulating layer on an area, not covered by a seed layer, of at least one of a p-type semiconductor layer and an n-type semiconductor layer, wherein the impurity concentration varies on the surface of the area; and immersing at least part of the seed layer into an electrolyte having metal ions which tend to reduce and deposit on the seed layer under no bias voltage.
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