发明名称 |
Flash memory device and method for adjusting read voltage of flash memory device |
摘要 |
A flash memory device includes a cell array and a read voltage adjuster. The cell array includes a first field having first memory cells and a second field having second memory cells. The read voltage adjuster determines a read voltage for reading first data from the first memory cells of the first field with reference to second data read from the memory cells of the second field.
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申请公布号 |
US8040725(B2) |
申请公布日期 |
2011.10.18 |
申请号 |
US20080146549 |
申请日期 |
2008.06.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG DONG-KU |
分类号 |
G11C16/26 |
主分类号 |
G11C16/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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