发明名称 Flash memory device and method for adjusting read voltage of flash memory device
摘要 A flash memory device includes a cell array and a read voltage adjuster. The cell array includes a first field having first memory cells and a second field having second memory cells. The read voltage adjuster determines a read voltage for reading first data from the first memory cells of the first field with reference to second data read from the memory cells of the second field.
申请公布号 US8040725(B2) 申请公布日期 2011.10.18
申请号 US20080146549 申请日期 2008.06.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG DONG-KU
分类号 G11C16/26 主分类号 G11C16/26
代理机构 代理人
主权项
地址