发明名称 |
Metal adhesion by induced surface roughness |
摘要 |
Back side metal (BSM) delamination induced by chip dicing of silicon wafers is avoided by roughening the polished silicon surface at chip edges by etching. The Thru-Silicon-Via (TSV) structures used in 3D chip integration is masked at the back side from roughening to maintain the polished surface at the TSV structures and, thus, reliable conductivity to the BSM layer.
|
申请公布号 |
US8039314(B2) |
申请公布日期 |
2011.10.18 |
申请号 |
US20080185259 |
申请日期 |
2008.08.04 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DEGRAW DANIELLE L.;LINDGREN PETER JAMES;SHIH DA-YUAN;WANG PING-CHUAN |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|