| 摘要 |
Provided is a manufacturing method with which a high thermal conductivity silicon nitride substrate having excellent sintering performance can be manufactured without the occurrence of a molding crack or degreasing crack, as well as to provide a silicon nitride substrate, and a silicon nitride circuit board and a semiconductor module using said silicon nitride substrate. In this silicon nitride substrate manufacturing method, in which a slurry is produced by mixing a silicon nitride powder, a sintering additive powder, and a binder in an organic solvent which is a dispersion medium, and the slurry is formed into a sheet, followed by degreasing and sintering, the oxygen content of the silicon nitride powder is 2.0 mass% or less and the specific surface area of the same is 3 to 11 m 2 /g, the additive ratio of the sintering additive powder is 4 to 15 mol%, and the water content ratio of the organic solvent is 0.03 to 3 mass%. |
