发明名称 Charge mapping memory array formed of materials with mutable electrical characteristics
摘要 A memory cell array including a data line; a capacitor; and a transistor coupled between the data line and the capacitor. At least one of the capacitor and the transistor includes a material with a mutable electrical characteristic. A memory cell array including a first transistor coupled between a first node, a second node, and a third node; and a second transistor coupled between the second node and a fourth node. The first transistor includes a material with a mutable electrical characteristic.
申请公布号 US8040729(B2) 申请公布日期 2011.10.18
申请号 US20090621801 申请日期 2009.11.19
申请人 PALO ALTO RESEARCH CENTER INCORPORATED 发明人 WONG WILLIAM S.;SAMBANDAN SANJIV;NG TSE NGA;STREET ROBERT A.
分类号 G11C16/04 主分类号 G11C16/04
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