发明名称 Damascene gate having protected shorting regions
摘要 The present invention relates generally to semiconductor devices and, more specifically, to damascene gates having protected shorting regions and related methods for their manufacture. A first aspect of the invention provides a method of forming a damascene gate with protected shorting regions, the method comprising: forming a damascene gate having: a gate dielectric atop a substrate; a gate conductor atop the gate dielectric; a conductive liner laterally adjacent the gate conductor; a spacer between the conductive liner and the substrate; and a first dielectric atop the gate conductor; removing a portion of the conductive liner; and depositing a second dielectric atop a remaining portion of the conductive liner, such that the second dielectric is laterally adjacent both the first dielectric and the gate.
申请公布号 US8039908(B2) 申请公布日期 2011.10.18
申请号 US20090616389 申请日期 2009.11.11
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ANDERSON BRENT A.;NOWAK EDWARD J.;RANKIN JED H.
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
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