发明名称 |
Metal oxide semiconductor (MOS) transistors having a recessed gate electrode |
摘要 |
A metal oxide semiconductor (MOS) includes an isolation layer disposed in a semiconductor substrate to define an active region. A source region and a drain region are disposed on both sides of the active region such that a first direction is defined from the source region to the drain region. A channel recess is disposed in the active region between the source and drain regions. The channel recess has a convex surface when viewed from a cross-sectional view taken along a second direction orthogonal to the first direction. A gate electrode fills the channel recess and crosses the active region in the second direction. A gate insulating layer is interposed between the gate electrode and the active region.
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申请公布号 |
US8039876(B2) |
申请公布日期 |
2011.10.18 |
申请号 |
US20100683089 |
申请日期 |
2010.01.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM YONG-SUNG;CHUNG TAE-YOUNG |
分类号 |
H01L27/148 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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