发明名称 Organic memory device using iridium organometallic compound and fabrication method thereof
摘要 Disclosed are a composition comprising a mixture of at least one iridium organometallic compound and an electrically conductive polymer, an organic active layer comprising the same, an organic memory device comprising the organic active layer and methods for fabricating the same. The organic memory device may include a first electrode, a second electrode and the organic active layer between the first and second electrodes. The organic memory device possesses the advantages of rapid switching time, decreased operating voltage, decreased fabrication costs, increased reliability and improved non-volatility.
申请公布号 US8039643(B2) 申请公布日期 2011.10.18
申请号 US20100805431 申请日期 2010.07.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE KWANG HEE;LYU YI YEOL;LEE SANG KYUN
分类号 C07F15/00;H01L51/00 主分类号 C07F15/00
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