| 摘要 |
A field effect transistor includes a nitride semiconductor layered structure that is formed on a substrate and includes a capping layer made of a compound represented by a general formula of InxAlyGa1−yN (wherein 0<x≦̸1, 0≦̸y<1 and 0<x+y≦̸1). A non-alloy source electrode and a non-alloy drain electrode are formed on the capping layer so as to be spaced from each other.
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