发明名称 Thin film transistor array panel for liquid crystal display and method for manufacturing the same
摘要 In a method of fabricating a liquid crystal display, an insulating layer for storage capacitors is reduced in thickness to increase the storage capacity while maintaining the aperture ratio in a stable manner. A thin film transistor array panel for the liquid crystal display includes an insulating substrate, and a gate line assembly and a storage capacitor line assembly formed on the insulating substrate. The gate line assembly has gate lines and gate electrodes. A gate insulating layer covers the gate line assembly and the storage capacitor line assembly. A semiconductor pattern is formed on the gate insulating layer. A data line assembly and storage capacitor conductive patterns are formed on the gate insulating layer overlaid with the semiconductor pattern. The data line assembly has data lines, source electrodes and drain electrodes. The storage capacitor conductive patterns are partially overlapped with the storage capacitor line assembly to thereby form first storage capacitors. A passivation layer covers the data line assembly, the storage capacitor conductive patterns and the semiconductor pattern. First and second contact holes are formed at the passivation layer while exposing the drain electrodes and the storage capacitor conductive patterns. Pixel electrodes are formed on the passivation layer while being connected to the drain electrodes and the storage capacitor conductive patterns through the first and the second contact holes. The pixel electrodes form second storage capacitors in association with parts of the storage capacitor line assembly.
申请公布号 US8040446(B2) 申请公布日期 2011.10.18
申请号 US20070697083 申请日期 2007.04.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE CHANG-HUN;KIM NAM-HUNG;CHANG HAK-SUN;LYU JAE-JIN
分类号 G02F1/1343;G02F1/1368;G02F1/1362;G09F9/30;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L27/13;H01L29/786 主分类号 G02F1/1343
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