发明名称 Method and system for controlling radical distribution
摘要 A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.
申请公布号 US8038834(B2) 申请公布日期 2011.10.18
申请号 US20100754662 申请日期 2010.04.06
申请人 TOKYO ELECTRON LIMITED;INTERNATIONAL BUSINESS MACHINES CORPORATION (“IBM”) 发明人 FUNK MERRITT;HORAK DAVID V.;STRANG ERIC J.;CHEN LEE
分类号 H01L21/3065;C23C16/00;C23C16/455;C23C16/50 主分类号 H01L21/3065
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