发明名称 |
Method and system for controlling radical distribution |
摘要 |
A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.
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申请公布号 |
US8038834(B2) |
申请公布日期 |
2011.10.18 |
申请号 |
US20100754662 |
申请日期 |
2010.04.06 |
申请人 |
TOKYO ELECTRON LIMITED;INTERNATIONAL BUSINESS MACHINES CORPORATION (“IBM”) |
发明人 |
FUNK MERRITT;HORAK DAVID V.;STRANG ERIC J.;CHEN LEE |
分类号 |
H01L21/3065;C23C16/00;C23C16/455;C23C16/50 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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