| 摘要 |
A semiconductor device includes a first wiring layer which is provided above a semiconductor substrate and includes a first insulating film and a wiring buried in the first insulating film, a second insulating film provided above the first wiring layer, a third insulating film provided on the second insulating film, and a capacitor element provided on the third insulating film. The wiring includes an upper surface having a protruding portion. The capacitor element includes a lower electrode provided on the third insulating film, a capacitor insulating film provided on the lower electrode, and an upper electrode provided on the capacitor insulating film.
|
