| 摘要 |
A photodiode includes a first silicon semiconductor layer formed over an insulating layer, a second silicon semiconductor layer formed over the insulating layer, having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, a low-concentration diffusion layer which is formed in the second silicon semiconductor layer and in which an impurity of either one of a P type and an N type is diffused in a low concentration, a P-type high-concentration diffusion layer which is formed in the first silicon semiconductor layer and in which the P-type impurity is diffused in a high concentration, and an N-type high-concentration diffusion layer which is opposite to the P-type high-concentration diffusion layer with the low-concentration diffusion layer interposed therebetween and in which the N-type impurity is diffused in a high concentration.
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