发明名称 |
Transistors having a channel region between channel-portion holes and methods of forming the same |
摘要 |
According to some embodiments of the invention, transistors have channel regions between channel-portion holes. Methods of forming the same include at least two channel-portion holes disposed in a semiconductor substrate. Line patterns are formed in parallel to be spaced apart from each other on a main surface of the semiconductor substrate to fill the channel-portion holes. A channel region is disposed in the semiconductor substrate below the line patterns. At this time, the channel region is formed between the channel-portion holes and also covers lower portions of the channel-portion holes. Driving current capability and refresh characteristics of DRAMs utilizing the inventive transistors are improved.
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申请公布号 |
US8039895(B2) |
申请公布日期 |
2011.10.18 |
申请号 |
US20080345415 |
申请日期 |
2008.12.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JIN-WOO;CHUNG TAE-YOUNG;KIM YONG-SUNG |
分类号 |
H01L29/76;H01L21/20;H01L21/336;H01L21/8234;H01L21/8242;H01L27/108;H01L29/78;H01L31/119 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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