| 摘要 |
Disclosed herein is a light emitting device. The light emitting device includes a support member and a light emitting structure on the support member (110) and including a first conductive semiconductor layer (131), a second conductive semiconductor layer (133) and an active layer (132) interposed between the first and second conductive semiconductor layers, and the active layer includes at least one quantum well layer and at least one barrier layer, at least one potential barrier layer (134) located between the first conductive semiconductor layer and a first quantum well layer, closest to the first conductive semiconductor layer, out of the at least one quantum well layer, and an undoped barrier layer (135) formed between the at least one potential barrier layer and the first quantum well layer and having a thickness different from that of the at least one barrier layer. The potential barrier layer and the undoped barrier layer spread the current of an ESD better over the active layer, thereby increasing the ESD tolerance. Without additional ESD protection needed in the package the brightness of the light emitting device is improved. |
