| 摘要 |
Processes for forming self-aligned, deposited source/drain, insulated gate, transistors and, in particular, FETs. By depositing a source/drain in a recess such that it remains only in the recess, the source/drain can be formed self-aligned to a gate and/or a channel of such a device. For example, in one such process a gate structure of a transistor may be formed and, in a material surrounding the gate structure, a recess created so as to be aligned to an edge of the gate structure. Subsequently, a source/drain conducting material may be deposited in the recess. Such a source/drain conducting material may be deposited, in some cases, as layers, with one or more such layers being planarized following its deposition. In this way, the conducting material is kept within the boundaries of the recess. |
