CRYSTALLIZATION METHOD OF AMORPHOUS SILICON LAYER, AND THIN FILM TRANSISTOR AND METHOD FOR THE SAME
摘要
<p>A method of crystallizing an amorphous silicon layer, a method of manufacturing a thin film transistor using the same, and a thin film transistor using the manufacturing method, the crystallizing method including: forming an amorphous silicon layer; positioning crystallization catalyst particles on the amorphous silicon layer to be separated from each other; selectively removing the crystallization catalyst particles from a portion of the amorphous silicon layer; and crystallizing the amorphous silicon layer by a heat treatment.</p>
申请公布号
KR20110113024(A)
申请公布日期
2011.10.14
申请号
KR20100032337
申请日期
2010.04.08
申请人
SAMSUNG MOBILE DISPLAY CO., LTD.
发明人
LEE, DONG HYUN;LEE, KI YONG;SEO, JIN WOOK;JEONG, MIN JAE;SON, YONG DUCK;SO, BYUNG SOO;PARK, SEUNG KYU;LEE, KIL WON;CHUNG, YUN MO;PARK, BYOUNG KEON;PARK, JONG RYUK;LEE, TAK YOUNG;JUNG, JAE WAN