发明名称 |
MASQUE POUR SOLIDIFICATION LATERALE SEQUENTIELLE ET PROCEDE DE CRISTALLISATION UTILISANT CELUI CI |
摘要 |
<p>Laser beam is irradiated on an amorphous silicon layer formed on a substrate through a mask with transmissive region having central region and tapered side regions. The substrate and the mask are relatively moved such that the side portion of the transmissive region overlaps with the central portion of the irradiated region. The laser beam is again irradiated on the amorphous silicon layer through the mask. Independent claims are also included for the following: (1) polycrystalline silicon layer forming apparatus; and (2) mask.</p> |
申请公布号 |
FR2849530(B1) |
申请公布日期 |
2011.10.14 |
申请号 |
FR20030007823 |
申请日期 |
2003.06.27 |
申请人 |
LG. PHILIPS LCD CO.,LTD. |
发明人 |
JUNG YUN HO |
分类号 |
H01L21/027;B23K26/06;H01L21/20;H01L21/268 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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