CONNECTING MATERIAL, SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING SAME

摘要

Lead-free connecting materials having satisfactory wetting properties and high heat resistance have come to be required as a result of increases in the temperature of element connection parts due to increases in the capacity of power modules. A Sn-based layer (11a) is formed by cladding or press forming as an outermost layer of an alloy foil (13) which comprises Sn (11b) and Al (12) as major components and which has an Al content of 40 mass% or less, thereby removing an oxide film from the alloy surface layer. Since the Al content of the alloy foil is 40 mass% or less, separation between the Sn and the Al is inhibited and wetting properties can be ensured. Thus, a connecting material and a connection which each has high heat resistance and is lightweight are possible.