| 摘要 |
PROBLEM TO BE SOLVED: To provide an AlGaInN-based LED having a thick epitaxial layer for improving light extraction rate.SOLUTION: The AlGaInN light-emitting diode element includes: a substrate; and a multilayered epitaxial structure coupled to the substrate. The multilayered epitaxial structure includes: an upper AlGaInN region; an active region; and a lower AlGaInN region. The upper and lower AlGaInN regions include multiple epitaxial layers made of at least one element selected from a group of aluminum, gallium, indium, and nitrogen. The multilayered epitaxial structure has a thickness of at least 4 μm. A surface of the substrate, to which the multilayered epitaxial structure is coupled, is a textured surface. |
