| 摘要 |
A Raman-active nanoparticle is provided that includes a dish-shape plasmonically active metal base, and a plasmonically active metal pillar disposed on the plasmonically active metal base, where the plasmonically active metal pillar is disposed within the dish-shape plasmonically active metal base and normal to a bottom of the dish-shape plasmonically active metal base, where a circular gap is disposed between the dish-shape plasmonically active metal pillar and inner walls of the dish-shape plasmonically active metal base. In one embodiment a Raman-active nanoparticle is provided that includes a dish-shape base having a dielectric material, an electrically conductive layer disposed on the inner surface of the dish-shape base, and an electrically conductive pillar disposed on the conductive layer, and within the dish-shape and perpendicular to a bottom of the dish-shape base, where a circular gap is disposed between the conductive pillar and inner walls of the dish-shape base. |
