| 摘要 |
PROBLEM TO BE SOLVED: To reduce nonuniform temperature of an annealing temperature, in the time of an annealing process.SOLUTION: According to embodiments, there is provided a semiconductor device, including: a first area 100 including plural transistors formed therein; and a second area 200 including plural dummy transistors formed therein, the second area surrounding the first area 100, wherein a pitch p of the dummy transistors formed in the second area 200, is equal to or less than a central wavelength λc of a flash lamp light used to form the plural transistors. Further, the width of an element forming area of the dummy transistor in the second area, is equal to or less than the half of the pitch of the dummy transistor. |
