发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To relieve a fuse element writable only once.SOLUTION: An ROM 33 stores defective bit information indicating whether a memory cell provided in an OTP memory 31 is defective, when an input address AD is stored in the ROM 33, an output control circuit 34 reverses data SOx read out from the memory cell specified by the input address AD and outputs it, when the input address AD is not stored in the ROM 33, the output control circuit 34 outputs the data SOx specified by the input address AD and read out from the memory cell as it is.
申请公布号 JP2011204300(A) 申请公布日期 2011.10.13
申请号 JP20100068601 申请日期 2010.03.24
申请人 TOSHIBA CORP 发明人 NAKANO HIROAKI;WADA OSAMU
分类号 G11C17/14;G11C16/06 主分类号 G11C17/14
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