发明名称 METHOD FOR FABRICATING SILICON CARBIDE MATERIAL
摘要 Methods for fabricating silicon carbide material are disclosed. One method includes: recycling carbon dioxide (CO2) emitted from a plant; and employing the recycled carbon dioxide and silicon dioxide (SiO2) to produce the silicon carbide (SiC) material and oxygen. Another method includes: recycling a carbon dioxide (CO2) emitted from a plant; and employing the recycled carbon dioxide and silicon (Si) to produce silicon carbide (SiC) material and oxygen.
申请公布号 US2011250117(A1) 申请公布日期 2011.10.13
申请号 US20100829347 申请日期 2010.07.01
申请人 GE INVESTMENT CO., LTD. 发明人 TSAI WEN-KUEI
分类号 C01B31/36 主分类号 C01B31/36
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