ALUMINUM GALLIUM NITRIDE BARRIERS AND SEPARATE CONFINEMENT HETEROSTRUCTURE (SCH) LAYERS FOR SEMIPOLAR PLANE III-NITRIDE SEMICONDUCTOR-BASED LIGHT EMITTING DIODES AND LASER DIODES
摘要
<p>A semipolar plane Ill-nitride semiconductor-based laser diode or light emitting diode, comprising a semipolar Indium containing multiple quantum wells for emitting light, having Aluminum containing quantum well barriers, wherein the Indium containing multiple quantum well and Aluminum containing barriers are grown in a semipolar orientation on a semipolar plane.</p>
申请公布号
WO2011127050(A1)
申请公布日期
2011.10.13
申请号
WO2011US31241
申请日期
2011.04.05
申请人
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;LIN, YOU-DA;OHTA, HIROAKI;NAKAMURA, SHUJI;DENBAARS, STEVEN P.;SPECK, JAMES S.
发明人
LIN, YOU-DA;OHTA, HIROAKI;NAKAMURA, SHUJI;DENBAARS, STEVEN P.;SPECK, JAMES S.
